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 ML13150 Narrowband FM Coilless Detector IF Subsystem
NARROWBAND FM COILLESS DETECTOR IF SUBSYSTEM FOR CELLULAR AND ANALOG APPLICATIONS SEMICONDUCTOR TECHNICAL DATA
Legacy Device: Motorola MC13150 The ML13150 is a narrowband FM IF subsystem targeted at cellular and other analog applications. The ML13150 has an onboard Colpitts VCO that can be crystal controlled or phased lock for second LO in dual conversion receivers. The mixer is a double balanced configuration with excellent third order intercept. It is useful to beyond 200 MHz. The IF amplifier is split to accommodate two low cost cascaded filters. RSSI output is derived by summing the output of both IF sections., The quadrature detector is a unique design eliminating the conventional tunable quadrature coil. Applications for the ML13150 include cellular, CT-1, 900 MHz cordless telephone, data links and other radio systems utilizing narrowband FM modulation.
ML13150-A9P PLASTIC PACKAGE (LQFP-24)
24 1
32 1
ML13150-B9P PLASTIC PACKAGE (LQFP-32)
CROSS REFERENCE/ORDERING INFORMATION MOTOROLA LANSDALE PACKAGE LQFP-24 LQFP-32 MC13150FTA MC13150FTB ML13150-A9P ML13150-B9P
Note: Lansdale lead free (Pb) product, as it becomes available, will be identified by a part number prefix change from ML to MLE.
* * * * * *
Linear Coilless Detector Adjustable Demodulator Bandwidth 2.5 to 6.0 Vdc Operation Low Drain Current <2.0 mA Typical Sensitivity of 2.0 V for 12 dB SINAD IIP3, Input Third Order Intercept Point of 0 dBm
* * * *
RSSI Range of Greater Than 100 dB Internal 1.4 k Terminations for 455 kHz Filters Split IF for Improved filtering and Extended RSSI Range Operating Temperature Range - TA = -40 to +85C
PIN CONNECTIONS
Mix in Enable VEE1 VCC (N/C) Mix in VEE1 VCC (N/C) Enable 26 LQFP-24 LOe LOb LQFP-32 RSSI LOe LOb RSSI 25 24 RSSIb 23 DETout 22 VEE (N/C) 21 VEE2 20 DETGain Detector 14 15 BWAdj 16 FAdj IF Limiter 9 V CC2 10 LIM in 11 VCC (N/C) 12 LIM d1 13 19 VEE (N/C) 18 AFTFilt 17 AFTout LIM d2 VCC (N/C)
24 Mixout VCC1 IFin IFd1 IFd2 IFout 1 2 3
23 Mixer
22
21
20
19 18 RSSIb 17 DETout 16 VEE2 Detector MixOut 1 VCC1 2 VCC (N/C) 3 IFin 4 IFd1 5 VCC (N/C) 6 IFd2 7 IFout 8
32
31
30
29
28
27
Mixer
4 5
IF
15 DET Gain 14 AFTFilt 13 AFT out
Limiter 6 7 V CC2 8 LIM in 9 LIMd1 10 LIMd2 11 BWAdj 12 FAdj
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Issue A
ML13150
MAXIMUM RATINGS
Rating Power Supply Voltage Junction Temperature Storage Temperature Range
NOTE:
LANSDALE Semiconductor, Inc.
Pin 2, 9 -
Symbol VCC(max) TJmax Tstg
Value 6.5 +150 -65 to +150
Unit Vdc C C
1. Devices should not be operated at or outside these values. The "Recommended Operating Limits" provide for actual device operation. 2. ESD data available upon request.
RECOMMENDED OPERATING CONDITIONS
Rating Power Supply Voltage -40 C (See Figure 22) Input Frequency Ambient Temperature Range Input Signal Level 32 32 fin TA Vin 10 to 500 -40 to +85 0 MHz C dBm TA = 25 C TA 85 C Pin 2, 9 21, 31 Symbol VCC VEE Value 2.5 to 6.0 0 Unit Vdc
DC ELECTRICAL CHARACTERISTICS (TA = 25 C, VCC1 = VCC2 = 3.0 Vdc, No Input Signal.)
Characteristics Total Drain Current (See Figure 2) Supply Current, Power Down (See Figure 3) Condition VS = 3.0 Vdc Pin 2+9 2+9 Symbol ITOTAL Min Typ 1.7 40 Max 3.0 Unit mA nA
AC ELECTRICAL CHARACTERISTICS (TA = 25 C, VS = 3.0 Vdc, fRF = 50 MHz, fLO = 50.455 MHz, LO Level = -10 dBm, see Figure 1 Test Circuit*, unless otherwise specified.)
Characteristics 12 dB SINAD Sensitivity (See Figure 15) RSSI Dynamic Range (See Figure 7) Input 1.0 dB Compression Point Input 3rd Order Intercept Point (See Figure 18) Coilless Detector Bandwidth Adjust (See Figure 11) MIXER Conversion Voltage Gain (See Figure 5) Mixer Input Impedance Mixer Output Impedance LOCAL OSCILLATOR LO Emitter Current (See Figure 26) IF & LIMITING AMPLIFIERS SECTION IF and Limiter RSSI Slope IF Gain IF Input & Output Impedance Limiter Input Impedance Limiter Gain
* Figure 1 Test Circuit uses positive (VCC) Ground.
Condition fmod = 1.0 kHz; fdev = 5.0 kHz Measured with No IF Filters
Pin 32 25 -
Symbol 1.0 dB C. Pt. IIP3 BW adj
Min -
Typ -100 100 -1 1 -1.0 26
Max -
Unit dBm dB dBm
kHz/A
Pin = -30 dBm; PLO = -10 dBm Single-Ended -
32 32 1
-
-
10 200 1.5
-
dB k
-
29
-
30
63
100
A
Figure 7 Figure 8 -
25 4, 8 4, 8 10 -
-
-
0.4 42 1.5 1.5 96
-
A/dB dB k k dB
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Issue A
LANSDALE Semiconductor, Inc.
ML13150
AC ELECTRICAL CHARACTERISTICS (continued) (TA = 25C, VS = 3.0 Vdc, fRF = 50 MHz, fLO = 50.455 MHz, LO Level = -10 dBm, see Figure 1 T est Circuit*, unless otherwise specified.)
Characteristics DETECTOR Frequency Adjust Current Frequency Adjust Voltage Bandwidth Adjust Voltage Detector DC Output Voltage (See Figure 25) Recovered Audio Voltage Figure 9, fIF = 455 kHz Figure 10, fIF = 455 kHz Figure 12, I15 = 1.0 A fdev = 3.0 kHz 16 16 15 23 23 41 600 85 49 650 570 1.36 122 56 700 175 A mVdc mVdc Vdc mVrms Condition Pin Symbol Min Typ Max Unit
* Figure 1 Test Circuit uses positive (VCC) Ground.
Figure 1. Test Circuit
VEE1 10 1:4 Z Xformer + 220 n 100 n Enable 49.9 100 n 32 Mixer Out 220 n 1 1.5 k 2 3 220 n 49.9 220 n 5 220 n 6 220 n 7 IF Amp Out 220 n 8 1.5 k VCC2 9 10 Limiter IF (6) Detector 20 19 220 n 18 17 11 12 13 14 15 16 100 k V18-V17 = 0; fIF = 455 kHz 10 + RS 100 k VEE2 4 VEE2 21 31 VEE1 24 Mixer VCC1 Local Oscillator 23 RSSI Buffer 100 p 22 RL 100 k 30 29 28 27 26 25 RSSI Buffer Detector Output RSSI LO Input
Mixer In
IF In
Limiter In
220 n 220 n 49.9
220 n 220 n
I15
I16
This device contains 292 active transistors.
Page 3 of 20
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Issue A
ML13150
LANSDALE Semiconductor, Inc.
ML13150 CIRCUIT DESCRIPTION GENERAL DESCRIPTION The ML13150 is a very low power single conversion narrowband FM receiver incorporating a split IF. This device can be used as a single conversion or as the backend in analog narrowband FM systems such as 900 MHz cordless phones, and narrowband data links with data rates up to 9.6 k baud. It contains a mixer, oscillator, extended range received signal strength indicator (RSSI), RSSI buffer, IF amplifier, limiting IF, a unique coilless quadrature detector and a device enabler function (see Package Pin Outs/Block Diagram). LOW CURRENT OPERATION The ML13150 is designed for battery and portable applications. Supply current is typically 1.7 mAdc at 3.0 Vdc. Figure 2 shows the supply current versus supply voltage. ENABLE The enable function is provided for battery powered operation. The enabled pin is pulled down to enable the regulators. Figure 3 shows the supply current versus enable voltage, Venable (relative to VCC) needed to enable the device. Note that the device is fully enabled at VCC - 1.3 Vdc. Figure 4 shows the relationship of the enable current, Ienable, to enable voltage, Venable. MIXER The mixer is a double-balanced four quadrant multiplier and is designed to work up to 500 MHz. It has a single ended input. Figure 5 shows the mixer gain and saturated output response as a function of input signal drive and for -10 dBm LO drive level. This is measured in the application circuit shown in Figure 15 in which a single LC matching network is used. Since the single-ended input impedance of the mixer is 200 , and alternate solution uses a 1:4 impedance transformer to match the mixer to 50 input impedance. The linear voltage gain of the mixer alone is approximately 4.0 dB (plus an additional 6.0 dB for the transformer). Figure 6 shows the mixer gain versus the LO input level for various mixer input levels at 50 MHz RF input. The buffered output of the mixer is internally loaded, resulting in an output impedance of 1.5k. LOCAL OSCILLATOR The on-chip transistor operates with crystal and LC resonant elements up to 220 MHz. Series resonant, overtone crystals are used to achieve excellent local oscillator stability. 3rd overtone crystals are used through about 65 to 70 MHz. Operation for 70 MHz up to 200 MHz is feasible using the on-chip transistor with a 5th or 7th overtone crystal. To enhance operation using an overtone crystal, the internal transistor's bias is increased by adding an external resistor from Pin 29 (in 32 pin QFP package) to VEE to keep the oscillator on continuously or it may be taken to the enable pin to shut is off when the receiver is disabled. -10 dBm of local oscillator drive is needed to adequately drive the mixer (Figure 6). The oscillator configurations specified above are described in the application section. RSSI The received signal strength indicator (RSSI) output is a current proportional to the log of the received signal amplitude. The RSSI current output is derived by summing the currents from the IF and limiting amplifier stages. An external resistor at Pin 25 (in 32 pin QFP package) sets the voltage range or swing of the RSSI output voltage. Linearity of the RSSI is optimized by using external ceramic bandpass filters which have an insertions loss of 4.0 dB. The RSSI circuit is designed to provide 100+ dB of dynamic range with temperature compensation (see Figures 7 and 23 which show the RSSI response of the applications circuit). RSSI BUFFER The RSSI buffer has limitations in what loads it can drive. It can pull loads well towards the positive and negative supplies, but has problems pulling the load away from the supplies. The load should be biased at half supply to overcome this situation.
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Issue A
LANSDALE Semiconductor, Inc.
ML13150
Figure 2. Supply Current versus Supply Voltage
2.0 ISUPPLY, SUPPLY CURRENT (mA) 1.6 1.2 0.8 0.4 0 1.5 ISUPPLY, SUPPLY CURRENT (A)
10-2 10-3 10-4 10-5 10-6 10-7 10-8 10-9 0.7
Figure 3. Supply Current versus Enable Voltage
VCC = 3.0 Vdc TA = 25C VENABLE Measured Relative to VCC
TA = 25C
2.5
3.5
4.5
5.5
6.5
7.5
10-10 0.5
0.9
1.1
1.3
1.5
VENABLE, SUPPLY VOLTAGE (Vdc)
VENABLE, ENABLE VOLTAGE (Vdc)
Figure 4. Enable Current versus Enable Voltage
70 IENABLE, ENABLE CURRENT ( A) MIXER IF OUTPUT LEVEL (dBm) 60 50 40 30 20 10 0 -10 0 0.4 0.8 1.2 1.6 2.0 VENABLE, ENABLE VOLTAGE (Vdc) VCC = 3.0 Vdc TA = 25C 20 10 0 -10 -20 -30 -40 -50 -50
Figure 5. Mixer IF Output Level versus RF Input Level
VEE = -3.0 Vdc TA = 25C
fRF = 50 MHz; fLO = 50.455 MHz LO Input Level = -10 dBm (100 mVrms) (Rin = 50 ; Rout = 1.4 k -40 -30 -20 -10 0 10 20
RF INPUT LEVEL (dBm)
Figure 6. Mixer IF Output Level versus Local Oscillator Input Level
20 RF In = 0 dBm MIXER IF OUTPUT LEVEL (dBm) 0 -20 -40 -60 -80 -60 RSSI OUTPUT CURRENT (A) VEE = -3.0 Vdc TA = 25C -20 dBm -40 dBm 40 30 20 10 0 -50 -40 -30 LO DRIVE (dBm) -20 -10 0 -120 50
Figure 7. RSSI Output Current versus Input Signal Level
VCC = 3.0 Vdc f = 50 MHz fLO = 50.455 MHz 455 kHz Ceramic Filter See Figure 15
fRF = 50 MHz; fLO = 50.455 MHz Rin = 50 ; Rout = 1.4 k
-100
-80
-60
-40
-20
0
SIGNAL INPUT LEVEL (dBm)
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Issue A
ML13150
LANSDALE Semiconductor, Inc.
IF AMPLIFIER The first IF amplifier section is composed of three differential stages. This section has internal dc feedback and external input decoupling for improved symmetry and stability. The total gain of the IF amplifier block is approximately 42 dB at 455 kHz. Figure 8 shows the gain of the IF amplifier as a function of the IF frequency. The fixed internal input impedance is 1.5 k; it is designed for applications where a 455 kHz ceramic filter is used and no external output matching is necessary since the filter requires a 1.5 k source and load impedance.
Overall RSSI linearity is dependent on having total midband attenuation of 10 dB (4.0 insertion loss plus 6.0 dB impedance matching loss) for the filter. The output of the IF amplifier is buffered and the impedance if 1.5k. LIMITER The limiter section is similar to the IF amplifier section except that six stages are used. The fixed internal input impedance is 1.5 k. The total gain of the limiting amplifier sections is approximately 96 dB. This IF limiting amplifier section internally drives the quadrature detector section.
Figure 8. IF Amplifier Gain versus IF Frequency
50 45 40 35 30 25 20 0.01 Vin = 100 V Rin = 50 Rout = 1.4 k BW (3.0 dB) = 2.4 MHz TA = 25C 0.1 1.0 10 Fadj CURRENT ( A) IF AMP GAIN (dB) 120 100 80 60 40 20 0 0 200
Figure 9. Fadj Current versus IF Frequency
VCC = 3.0 Vdc Slope at 455 kHz = 9.26 kHz/A
400
600
800
1000
f, FREQUENCY (MHz)
f, IF FREQUENCY (kHz)
800
Figure 10. Fadj Voltage versus Fadj Current
VCC = 3.0 Vdc TA = 25C
Figure 11. BWadj Current versus IF Frequency
3.5 3.0 BWadj CURRENT ( A) 2.5 2.0 1.5 1.0 0.5 VCC = 3.0 Vdc BW 26 kHz/A
Fadj VOLTAGE (mVdc)
750
700
650
600 0 20 40 60 80 100 Fadj CURRENT (A)
0 400
420
440
460
480
500
f, IF FREQUENCY (kHz)
Page 6 of 20
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Issue A
LANSDALE Semiconductor, Inc.
ML13150
COILLESS DETECTOR The quadrature detector is similar to a PLL. There is an internal oscillator running at the IF frequency and two detector outputs. One is used to deliver the audio signal and the other one is filtered and used to tune the oscillator. The oscillator frequency is set by and external resistor at the Fadj pin. Figure 9 shows the control current required for a particular frequency; Figure 10 shows the pin voltage at that current. From this the value of RF is chosen. For example, 455 kHz would require a current of around 50 A. The pin voltage (Pin 16 in the 32 pin QFP package) is around 655mV giving a resistor of 13.1 k. Choosing 12 k as the nearest standard value gives a current of approximately 55 A. The 5.0 A difference can be taken up by the tuning resistor, RT. The best nominal frequency for the AFTout pin (Pin 17) would be half supply. A supply voltage of 3.0 Vdc suggests a resistor value of (1.5 - 0.655) V/5.0 A = 169 k. Choosing 150 k would give a tuning current of 3/150 k = 20 A. From Figure 9 this would give a tuning range of roughly 10 kHz/A or 100 kHz which should be adequate. The bandwidth can be adjusted with the help of Figure 11.
For example, 1.0 A would give a band width of 13 kHz. The voltage across the bandwidth resistor, RB from Figure 12 is VCC - 2.44 Vdc = 0.56 Vdc for VCC = 3.0 Vdc, so RB = 0.56V/1.0 A = 560 k. Actually the locking range will be 13 kHz while the audio bandwidth wil be approximately 8.4 kHz due to an internal filter capacitor. This is verified in Figure 13. For some applications it may be desireable that the audio bandwidth is increased; this is done by reducing RB. Reducing RB widens the detector bandwidth and improves the distortion at high input levels at the expense of 12 dB SINAD sensitivity. The low frequency 3.0dB point is set by the tuning circuit such that the product RTCT = 0.68/f3dB. So, for example, 150 k and 1.0 F give a 3.0 dB point of 4.5 kHz. The recovered audio is set by RL to give roughly 50mV per kHz deviation per 100 k of resistance. The dc level can be shifted by RS from the nominal 0.68 V by the following equation: Detector DC Output = ((RL + RS)/RS) 0.68 Vdc Thus RS = RL sets the output at 2 x 0.68 = 1.36 V; RL = 2RS sets the output at 3 x .068 = 2.0V.
10-3
Figure 12. BWadj Current versus BWadj Voltage
DEMODULATOR OUTPUT (dB) VCC = 3.0 Vdc TA = 25 C
Figure 13. Demodulator Output versus Frequency
10 0 RB = 560 k -10 -20 -30 -40 -50 0.1 VCC = 3.0 Vdc TA = 25 C fRF = 50 MHz fLO = 50.455 MHz LO Level =-10 dBm No IF Bandpass Filters fdev = 4.0 kHz 1.0 RB = 1.0 M
BWadj CURRENT (A)
10-4
10-5
10-6
10-7 2.3
2.5 BWadj VOLTAGE (Vdc)
2.7
10
100
f, FREQUENCY (kHz)
Page 7 of 20
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Issue A
ML13150
LANSDALE Semiconductor, Inc.
Legacy Applications Information EVALUATION PC BOARD The evaluation PCB is very versatile and is intended to be used across the entire useful frequency range of this device. The center section of the board provides an area for attaching all SMT components to the circuit side and radial leaded components to the component ground side (see Figures 29 and 30). Additionally, the peripheral area surrounding the RF core provides pads to add supporting and interface circuitry as a particular application requires. There is an area dedicated for a LNA preamp. This evaluation board will be discussed and referenced in this section. COMPONENT SELECTION The evaluation PC board is designed to accommodate specific components, while also being versatile enough to use components from various manufacturers and coil types. The applications circuit schematic (Figure 15) specifies particular components that were used to achieve the results shown in the typical curves but equivalent components should give similar results. Component placement views are shown in Figures 27 and 28 for the application circuit in Figure 15 and for the 83.616 MHz crystal oscillator circuit in Figure 16. INPUT MATCHING COMPONENTS The input matching circuit shown in the application circuit schematic (Figure 15) is a series L, shunt C single L section which is used to match the mixer input to 50 . An alternative input network may use 1:4 surface mount transformers or BALUNs. The 12 dB SINAD sensitivity using the 1:4 impedance transformer is typically -100 dBm for fmod = 1.0 kHz and fdev = 5.0 kHz at f in = 50 MHz and fLO = 50.455 MHz (see Figure 14). It is desirable to use a SAW filter before the mixer to provide additional selectivity an adjacent channel rejection and improved sensitivity. SAW filters sourced from Toko (Part #SWS083GBWA) and Murata (Part # SAF83.16MA51X) are excellent choices to easily interface with the MC13150 mixer. They are packaged in a 12 pin low profile surface mount ceramic package. The center frequency is 83.161 MHz and the 3.0 dB bandwidth is 30 kHz.
Figure 14. S+N+D, N+D, N, 30% AMR versus Input Signal Level
20 S+N+D, N+D, N, 30% AMR (dB) 10 S+N+D 0 -10 -20 -30 -40 -50 -60 -120 -100 -80 INPUT SIGNAL (dBm) -60 -40 VCC = 3.0 Vdc fmod = 1.0 kHz fdev = 5.0 kHz fin = 50 MHz fLO = 50.455 MHz LO Level = -10 dBm See Figure 15
N+D 30% AMR N
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Issue A
LANSDALE Semiconductor, Inc.
ML13150
Legacy Applications Information
Figure 15. Application Circuit
(3) LO Input (1) 180 nH RF/IF Input 100 n
11 p 100 n 51 82 k
(4) Enable (5) RSSI
32 (2) 455 kHz IF Ceramic Filter 1 2 3 4 5 1.0 n 100 n 100 n 6 7 1.0 n 8 9 IF
31 VEE1
30
29
28
27
26
25 24 23
RSSI Buffer Detector Output 1.0 n RL 150 k
Mixer VCC1 Local Oscillator
RSSI Buffer VEE2
22 21 20 (6) Detector 19
RS 150 k 100 n
18 17
Limiter VCC2 10 11 12 13 14 15
1.0 CT
16 150 k RT
455 kHz IF Ceramic Filter
100 n 100 n 560 k RB 12 k RF
(6) Coilless Detector Circuit
10
+
VCC
NOTES: 1. Alternate solution is 1:4 impedance transformer (sources include Mini Circuits, Coilcraft and Toko). 2. 455 kHz ceramic filters (source Murata CFU455 series which are selected for various bandwidths). 3. For external LO source, a 51 pullup resistor is used to bias the base of the on-board transistor as shown in Figure 15. Designer may provide local oscillator with 3rd, 5th, or 7th overtone crystal oscillator circuit. The PC board is laid out to accommodate external components needed for a Butler emitter coupled crystal oscillator (see Figure 16). 4. Enable IC by switching the pin to V EE. 5. The resistor is chosen to set the range of RSSI voltage output swing. 6. Details regarding the external components to setup the coilless detector are provided in the application section.
Page 9 of 20
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Issue A
ML13150
LANSDALE Semiconductor, Inc.
Legacy Applications Information LOCAL OSCILLATORS HF & VHF APPLICATIONS In the application schematic, an external sourced local oscillator is utilized in which the base is biased via a 51 resistor to VCC. However, the on-chip grounded collector transistor may be used for HF and VHF local oscillators with higher order overtone crystals. Figure 16 shows a 5th overtone oscillator at 83.616 MHz. The circuit uses a Butler overtone oscillator configuration. The amplifier is an emitter follower. The crystal is driven from the emitter and is coupled to the high impedance base through a capacitive tap network. Operation at the desired overtone frequency is ensured by the parallel resonant circuit formed by the variable inductor and the tap capacitors and parasitic capacitances of the on-chip transistor and PC board. The variable inductor specified in the schematic could be replaced with a high tolerance, high Q ceramic or air wound surface mount component if the other components have tight enough tolerance. A variable inductor provides an adjustment for gain and frequency of the resonant tank ensuring lock up and start-up of the crystal oscillator. The overtone crystal is chosen with ESR of typically 80 and 120 maximum; if the resistive loss in the crystal is too high the performance of oscillator may be impacted by lower gain margins. A series LC network to ac ground (which is VCC) is comprised of the inductance of the base lead of on-chip transistor and PC board traces and tap capacitors. Parasitic oscillations often occur in the 200 to 800 MHz range. A small resistor is placed in series with the base (Pin 28) to cancel the negative resistance associated with this undesired mode of oscillation. Since the base input impedance is so large, a small resistor in the range of 27 to 68 has very little effect on the desired Butler mode of oscillation. The crystal parallel capacitance, Co, provides a feedback path that is low enough in reactance at frequencies of 5th overtones or higher to cause trouble. Co has little effect near resonance because of the low impedance of the crystal motional arm (Rm-Lm-Cm). As the tunable inductor, which forms the resonant tank with the tap capacitors, is tuned off the crystal resonant frequency, it may be difficult to tell if the oscillation is under crystal control. Frequency jumps may occur as the inductor is tuned. In order to eliminate this behavior an inductor, Lo, is placed in parallel with the crystal. Lo is chosen to resonant with the crystal parallel capacitance, Co, at the desired operation frequency. This inductor provides a feedback path at frequencies well below resonance; however, the parallel tank network of the tap capacitors and tunable inductor prevent oscillation at these frequencies.
Figure 16. ML13150 Overtone Oscillator fRF = 83.16 MHz; f LO = 83.616 MHz 5th Overtone Crystal Oscillator
(4) 0.135 H 33 Mixer 28 1.0 H 39 p 39 p 29 (3) 27 k 5th OT XTAL VEE 31 + 1.0
MC13150
10 n
VCC
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LANSDALE Semiconductor, Inc.
ML13150
RECEIVER DESIGN CONSIDERATIONS The curves of signal levels at various portions of the application receiver with respect to RF input level are shown in Figure 17. This information helps determine the network topology and gain blocks required ahead of the ML13150 to achieve the desired sensitivity and dynamic range of the receiver system. The PCB is laid out to accommodate a low noise preamp followed by the 83.16 MHz SAW filter. In the
application circuit (Figure 15), the input 1.0 dB compression point is -10 dBm and the input third order intercept (IP3) performance of the system is approximately 0 dBm (see Figure 18). TYPICAL PERFORMANCE OVER TEMPERATURE Figures 19-26 show the device performance over temperature.
Figure 17. Signal Levels versus RF Input Signal Level
10 0 -10 POWER (dBm) -20 -30 Mixer Output -40 IF Input -50 -60 -70 -80 -70 -60 -50 -40 -30 -20 -10 0 fRF = 50 MHz fLO = 50.455 MHz; LO Level = -10 dBm See Figure 15 Limiter Input Mixer Input RF Input at Transformer Input
IF Output
RF INPUT SIGNAL LEVEL (dBm)
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ML13150
LANSDALE Semiconductor, Inc.
Figure 18. 1.0 dB Compression Point and Input Third Order Intercept Point versus Input Power
20 VCC = 3.0 Vdc fRF1 = 50 MHz fRF2 = 50.01 MHz fLO = 50.455 MHz PLO = -10 dBm See Figure 15 1.0 dB Compression Point = -11 dBm IP3 = -0.5 dBm
MIXER IF OUTPUT LEVEL (dBm)
0
-20
-40
-60
-80
-60
-40
-20
0
20
RF INPUT POWER (dBm)
TYPICAL PERFORMANCE OVER TEMPERATURE
Figure 19. Supply Current, IVEE1 versus Signal Input Level
5.0 IVEE2 , SUPPLY CURRENT (mA) IVEE1, SUPPLY CURRENT (mA) 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 -120 -105 -90 -75 TA = 25C -60 -45 -30 TA = -40C 0.2 -15 0 -40 -20 0 20 40 60 80 SIGNAL INPUT LEVEL (dBm) TA, AMBIENT TEMPERATURE (C) TA = 85C VCC = 3.0 Vdc fc = 50 MHz fdev = 4.0 kHz 0.35 VCC = 3.0 Vdc 0.3
Figure 20. Supply Current, IVEE2 versus Ambient Temperature
0.25
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TYPICAL PERFORMANCE OVER TEMPERATURE
Figure 21. Total Supply Current versus Ambient Temperature
1.8 VCC = 3.0 Vdc MINIMUM SUPPLY VOLTAGE (Vdc) TOTAL SUPPLY CURRENT (mA) 1.75 1.7 1.65 1.6 1.55 1.5 1.45 1.4 -40 -20 0 20 40 60 80 TA, AMBIENT TEMPERATURE (C) 3.0
ML13150
Figure 22. Minimum Supply Voltage versus Ambient Temperature
2.5
2.0
1.5
1.0 -40 -20 0 20 40 60 80 TA, AMBIENT TEMPERATURE (C)
Figure 23. RSSI Current versus Ambient Temperature and Signal Level
60 Vin = 0 dBm -20 dBm -40 dBm -60 dBm -80 dBm 10 0 -40 -20 0 20 40 60 80 TA, AMBIENT TEMPERATURE (C) -100 dBm -120 dBm 100 RECOVERED AUDIO (Vpp ) 50 RSSI CURRENT ( A) 40 30 20 VCC = 3.0 Vdc fRF = 50 MHz 0.7 0.65 0.6 0.55 0.5 0.45 0.4 -40
Figure 24. Recovered Audio versus Ambient Temperature
VCC = 3.0 Vdc RF In = -50 dBm fc = 50 MHz fLO = 50.455 MHz fdev = -4.0 kHz -20 0 20 40 60 80 100
TA, AMBIENT TEMPERATURE (C)
Figure 25. Demod DC Output Voltage versus Ambient Temperature
1.7 DEMOD DC OUTPUT VOLTAGE (Vdc) 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 -40 50 -20 0 20 40 60 80 -40 VCC = 3.0 Vdc RF In = -50 dBm fc = 50 MHz fLO = 50.455 MHz fdev = 4.0 kHz 100 90 LO CURRENT ( A) 80 70 60
Figure 26. LO Current versus Ambient Temperature
VCC = 3.0 Vdc RF In = -50 dBm fc = 50 MHz fLO = 50.455 MHz fdev = 4.0 kHz
-20
0
20
40
60
80
TA, AMBIENT TEMPERATURE (C)
TA, AMBIENT TEMPERATURE (C)
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ML13150
LANSDALE Semiconductor, Inc.
Legacy Applications Information
Figure 27. Component Placement View - Circuit Side
100 n 10 n 50 SemiRigid Coax 39 p 33 39 p 27 k 180 n
100 n
11 p MC13150FTB
82 k 150 k 150 k 1n 100 n
1n
1n 1n
100 n 1n 560 k
150 k
1 12 k
+ 100 n 10
GND
VCC
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Issue A
ML13150
LANSDALE Semiconductor, Inc.
Legacy Applications Information
Figure 28. Component Placement View - Ground Side
VCC
BW_adj GND
F_adj
DET_out
455 kHz Ceramic Filter
455 kHz Ceramic Filter
RSSI AFT_adj 455 kHz Ceramic Filter
455 kHz Ceramic Filter
1 H 83.616 MHz
ENABLE Xtal
135 nH
LO Tuning
SMA
LO IN RF1 IN RF2 IN
3.8"
Page 15 of 20
www.lansdale.com
Issue A
ML13150
LANSDALE Semiconductor, Inc.
Legacy Applications Information
Figure 29. PCB Circuit Side View
GND
VCC
MC13150
3.8"
Rev 0 3/95
Page 16 of 20
www.lansdale.com
Issue A
ML13150
LANSDALE Semiconductor, Inc.
Legacy Applications Information
Figure 30. PCB Ground Side View
VCC
BW_adj GND
F_adj
DET_out
455 kHz Ceramic Filter RSSI AFT_adj 455 kHz Ceramic Filter
ENABLE Xtal
LO Tuning
LO IN RF1 IN RF2 IN
3.8"
Page 17 of 20
www.lansdale.com
Issue A
ML13150
LANSDALE Semiconductor, Inc.
OUTLINE DIMENSIONS
ML13150-A9P PLASTIC PACKAGE CASE 977-01 (LQFP-24) ISSUE O 0.200 (0.008) AB T-U Z A A1
24 19
9
4X
DETAIL Y
-T- V
1
18
-U- B B1
NOTES: 1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION: MILLIMETER. 3 DATUM PLANE -AB- IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE. 4 DATUMS -T-, -U-, AND -Z- TO BE DETERMINED AT DATUM PLANE -AB-. 5 DIMENSIONS S AND V TO BE DETERMINED AT DATUM PLANE -AC-. 6 DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.250 (0.010) PER SIDE. DIMENSIONS A AND B DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE AB. 7 DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. DAMBAR PROTRUSION SHALL NOT CAUSE THE D DIMENSION TO EXCEED 0.350 (0.014). 8 MINIMUM SOLDER PLATE THICKNESS SHALL BE 0.0076 (0.0003). 9 EXACT SHAPE OF EACH CORNER IS OPTIONAL. MILLIMETERS MIN MAX 4.000 BSC 2.000 BSC 4.000 BSC 2.000 BSC 1.400 1.600 0.170 0.270 1.350 1.450 0.170 0.230 0.500 BSC 0.050 0.150 0.090 0.200 0.500 0.700 12 REF 0.090 0.160 0.250 BSC 1 5 0.150 0.250 6.000 BSC 3.000 BSC 6.000 BSC 3.000 BSC 0.200 REF 1.000 REF INCHES MIN MAX 0.157 BSC 0.079 BSC 0.157 BSC 0.079 BSC 0.055 0.063 0.007 0.011 0.053 0.057 0.007 0.009 0.020 BSC 0.002 0.006 0.004 0.008 0.020 0.028 12 REF 0.004 0.006 0.010 BSC 1 5 0.006 0.010 0.236 BSC 0.118 BSC 0.236 BSC 0.118 BSC 0.008 REF 0.039 REF
V1
6
13
7
12
S1 S
4X
-Z-
0.200 (0.008) AB T-U Z DETAIL AD
DIM A A1 B B1 C D E F G H J K M N P Q R S S1 V V1 W X
-AB- -AC-
0.080 (0.003) AC M
TOP & BOTTOM
-T-, -U-, -Z- R CE AE AE J N
F D 0.080 (0.003)
S
W H X DETAIL AD K
AC T-U
S
Z
S
Q
GAUGE PLANE
P G DETAIL Y
0.250 (0.010)
SECTION AEAE
Page 18 of 20
www.lansdale.com
Issue A
ML13150
LANSDALE Semiconductor, Inc.
OUTLINE DIMENSIONS
ML13150-B9P PLASTIC PACKAGE CASE 873-01 (LQFP-32) ISSUE A L B P
24 25
17 16 S
B
S
D
D
S
0.20 (0.008) M C A-B 0.05 (0.002) A-B
H A-B
S
-A-,-B-,-DDETAIL A F
-AL
-BB
M
V
BASE METAL
DETAIL A
32 1 8 9
0.20 (0.008)
J D
N
-DA 0.20 (0.008) M C A-B 0.05 (0.002) A-B S 0.20 (0.008)
M S
0.20 (0.008) D
S
M
C A-B
S
D
S
SECTION B-B
VIEW ROTATED 905 CLOCKWISE
H A-B
S
D
S
M
DETAIL C
CE -CSEATING PLANE
-HH G U M
DATUM PLANE
0.01 (0.004)
DIM A B C D E F G H J K L M N P Q R S T U V X MILLIMETERS MIN MAX 7.10 6.95 7.10 6.95 1.60 1.40 0.273 0.373 1.50 1.30 - 0.273 0.80 BSC 0.20 - 0.119 0.197 0.57 0.33 5.6 REF 8 6 0.119 0.135 0.40 BSC 5 10 0.15 0.25 8.85 9.15 0.15 0.25 5 11 8.85 9.15 1.0 REF INCHES MIN MAX 0.274 0.280 0.274 0.280 0.055 0.063 0.010 0.015 0.051 0.059 - 0.010 0.031 BSC 0.008 - 0.005 0.008 0.013 0.022 0.220 REF 8 6 0.005 0.005 0.016 BSC 10 5 0.006 0.010 0.348 0.360 0.006 0.010 5 11 0.348 0.360 0.039 REF
T -HDATUM PLANE
R
K X DETAIL C
Q
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DATUM PLANE -H- IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE. 4. DATUMS -A-, -B- AND -D- TO BE DETERMINED AT DATUM PLANE -H-. 5. DIMENSIONS S AND V TO BE DETERMINED AT SEATING PLANE -C-. 6. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.25 (0.010) PER SIDE. DIMENSIONS A AND B DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 7. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OR THE FOOT.
Page 19 of 20
www.lansdale.com
Issue A
ML13150
LANSDALE Semiconductor, Inc.
Lansdale Semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Lansdale does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights nor the rights of others. "Typical" parameters which may be provided in Lansdale data sheets and/or specifications can vary in different applications, and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by the customer's technical experts. Lansdale Semiconductor is a registered trademark of Lansdale Semiconductor, Inc.
Page 20 of 20
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Issue A


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